硅(gui)(gui)太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)制造過(guo)程中消耗的(de)能(neng)(neng)(neng)量要比單晶(jing)(jing)硅(gui)(gui)太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)少30％左右，因此多(duo)(duo)(duo)(duo)晶(jing)(jing)硅(gui)(gui)太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)占(zhan)太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)總產(chan)量的(de)份額大，制造成本也小于單晶(jing)(jing)硅(gui)(gui)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)，所以使用多(duo)(duo)(duo)(duo)晶(jing)(jing)硅(gui)(gui)太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)將(jiang)(jiang)會(hui)更加(jia)的(de)節能(neng)(neng)(neng)、環保。其實可供制造太(tai)(tai)陽(yang)(yang)(yang)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)半導(dao)體材料(liao)(liao)(liao)很(hen)多(duo)(duo)(duo)(duo)，隨著材料(liao)(liao)(liao)工業的(de)發(fa)展、太(tai)(tai)陽(yang)(yang)(yang)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)品種將(jiang)(jiang)越來(lai)越多(duo)(duo)(duo)(duo)。目前已進行研究和試制的(de)太(tai)(tai)陽(yang)(yang)(yang)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)，除(chu)硅(gui)(gui)系列外，太(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)(neng)發(fa)電(dian)(dian)(dian)光伏(fu)板，還有(you)、、銅銦(yin)硒(xi)等許多(duo)(duo)(duo)(duo)類型的(de)太(tai)(tai)陽(yang)(yang)(yang)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)，舉不勝舉，贛州光伏(fu)板，通常這些材料(liao)(liao)(liao)都會(hui)用來(lai)制作非(fei)晶(jing)(jing)硅(gui)(gui)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)。

光伏組件材料(liao)分類用于電子級多(duo)(duo)(duo)晶(jing)硅占55%左右，太(tai)陽(yang)能(neng)級多(duo)(duo)(duo)晶(jing)硅占45%，隨著光伏產(chan)業(ye)的(de)迅猛發展(zhan)，太(tai)陽(yang)能(neng)電池對多(duo)(duo)(duo)晶(jing)硅需(xu)(xu)求(qiu)量(liang)的(de)增(zeng)長速度高于半導體多(duo)(duo)(duo)晶(jing)硅的(de)發展(zhan)，預計(ji)到(dao)2008年(nian)太(tai)陽(yang)能(neng)多(duo)(duo)(duo)晶(jing)硅的(de)需(xu)(xu)求(qiu)量(liang)將超過(guo)電子級多(duo)(duo)(duo)晶(jing)硅。1994年(nian)全世(shi)界太(tai)陽(yang)能(neng)電池的(de)總(zong)產(chan)量(liang)只有(you)69MW，而2004年(nian)就接近1200MW，雙面光伏板，在短短的(de)10年(nian)里就增(zeng)長了17倍。

非晶硅(gui)太(tai)(tai)(tai)(tai)陽(yang)能(neng)板(ban)光(guang)(guang)譜(pu)響應的(de)峰值(zhi)與太(tai)(tai)(tai)(tai)陽(yang)光(guang)(guang)譜(pu)的(de)峰值(zhi)很(hen)接近(jin)。由于非晶硅(gui)材料的(de)本(ben)(ben)征(zheng)吸收系(xi)數很(hen)大，因此非晶硅(gui)太(tai)(tai)(tai)(tai)陽(yang)能(neng)板(ban)在弱光(guang)(guang)下的(de)發電能(neng)力遠高于晶體硅(gui)太(tai)(tai)(tai)(tai)陽(yang)能(neng)板(ban)。在1980年非晶硅(gui)太(tai)(tai)(tai)(tai)陽(yang)能(neng)板(ban)實現商品化(hua)后，日本(ben)(ben)三洋電器公(gong)司利用(yong)其制成(cheng)計(ji)算器電源，此后應用(yong)范圍逐漸從多種電子消費(fei)產(chan)品，光(guang)(guang)伏板(ban)廠，如手(shou)表、計(ji)算器、玩(wan)具等擴展到戶用(yong)電源光(guang)(guang)伏電站(zhan)等。非晶硅(gui)太(tai)(tai)(tai)(tai)陽(yang)能(neng)板(ban)成(cheng)本(ben)(ben)低，便于大規模(mo)生產(chan)，易于實現與建(jian)筑一體化(hua)，有著巨大的(de)市場潛力。