多(duo)晶(jing)(jing)硅太(tai)陽(yang)電(dian)(dian)池(chi)(chi)的(de)制(zhi)作工藝與(yu)單(dan)晶(jing)(jing)硅太(tai)陽(yang)電(dian)(dian)池(chi)(chi)差不(bu)多(duo)，但(dan)是(shi)(shi)多(duo)晶(jing)(jing)硅太(tai)陽(yang)能電(dian)(dian)池(chi)(chi)的(de)光電(dian)(dian)轉換(huan)效率(lv)則要降低(di)不(bu)少，太(tai)陽(yang)能組件(jian)回收，其(qi)光電(dian)(dian)轉換(huan)效率(lv)約12%左右。低(di)鐵超白(bai)就(jiu)是(shi)(shi)說光伏(fu)組件(jian)中光伏(fu)玻(bo)璃(li)(li)的(de)含鐵量比普(pu)通(tong)玻(bo)璃(li)(li)要低(di)，從(cong)而增加了玻(bo)璃(li)(li)的(de)透光率(lv)。同時從(cong)玻(bo)璃(li)(li)邊緣看，這種玻(bo)璃(li)(li)也比普(pu)通(tong)玻(bo)璃(li)(li)白(bai)，普(pu)通(tong)玻(bo)璃(li)(li)從(cong)邊緣看是(shi)(shi)偏(pian)綠色的(de)。光伏(fu)組件(jian)的(de)背板(ban)材料正適(shi)合封裝太(tai)陽(yang)能電(dian)(dian)池(chi)(chi)組件(jian)，作為電(dian)(dian)池(chi)(chi)組件(jian)的(de)背板(ban)材料有效地防止(zhi)了各(ge)種介質尤其(qi)是(shi)(shi)水(shui)、氧、腐蝕(shi)性氣體等(deng)對EVA和太(tai)陽(yang)能電(dian)(dian)池(chi)(chi)片的(de)侵蝕(shi)與(yu)影響。

單體(ti)太(tai)陽電(dian)(dian)池(chi)(chi)(chi)(chi)不能(neng)直接做電(dian)(dian)源使用(yong)(yong)。作(zuo)電(dian)(dian)源必須將若干單體(ti)電(dian)(dian)池(chi)(chi)(chi)(chi)串、并聯連接和嚴(yan)密封(feng)裝成(cheng)組件。太(tai)陽能(neng)電(dian)(dian)池(chi)(chi)(chi)(chi)組件（也叫(jiao)太(tai)陽能(neng)電(dian)(dian)池(chi)(chi)(chi)(chi)板(ban)）是(shi)(shi)太(tai)陽能(neng)發電(dian)(dian)系統中(zhong)的(de)部分，也是(shi)(shi)太(tai)陽能(neng)發電(dian)(dian)系統中(zhong)的(de)部分。其作(zuo)用(yong)(yong)是(shi)(shi)將太(tai)陽能(neng)轉化為電(dian)(dian)能(neng)，或(huo)送往蓄電(dian)(dian)池(chi)(chi)(chi)(chi)中(zhong)存(cun)儲起(qi)來，或(huo)推動負(fu)載(zai)工作(zuo)。對正(zheng)負(fu)電(dian)(dian)荷，濟寧太(tai)陽能(neng)組件，由(you)于在PN結區(qu)域(yu)的(de)正(zheng)負(fu)電(dian)(dian)荷被分離，因而可以產生一個外(wai)電(dian)(dian)流(liu)場，電(dian)(dian)流(liu)從(cong)晶體(ti)硅片電(dian)(dian)池(chi)(chi)(chi)(chi)的(de)底(di)端經(jing)過負(fu)載(zai)流(liu)至(zhi)電(dian)(dian)池(chi)(chi)(chi)(chi)的(de)頂端。 這就是(shi)(shi) “光生伏打效(xiao)應”。

將(jiang)一個(ge)負(fu)載連(lian)接在太陽(yang)能電池(chi)(chi)的上下兩表面(mian)間時，將(jiang)有電流(liu)流(liu)過該負(fu)載，于是太陽(yang)能電池(chi)(chi) 就產生了(le)電流(liu)；太陽(yang)能電池(chi)(chi)吸收的光(guang)子越(yue)多，太陽(yang)能組件(jian)的價格(ge)，產生的電流(liu)也就越(yue)大。光(guang)伏(fu)(fu)組件(jian)對晶(jing)硅電池(chi)(chi)組件(jian)背板(ban)的性(xing)能要求通常包括：1.具有良好(hao)的耐(nai)氣候性(xing)能；2.層壓溫度(du)下不起任何(he)變化。光(guang)伏(fu)(fu)組件(jian)中單晶(jing)組件(jian)制造流(liu)程(cheng)單晶(jing)電池(chi)(chi)組件(jian)的制造始于單晶(jing)爐，在單晶(jing)爐中將(jiang)“籽(zi)晶(jing)”放于旋轉(zhuan)軸上讓硅晶(jing)體圍繞其緩慢(man)生長(chang)。單晶(jing)爐的生長(chang)特征(zheng)使得每一根單晶(jing)棒都是圓的，單晶(jing)電池(chi)(chi)生產過程(cheng)中還(huan)必須要有一個(ge)切方的過程(cheng)。