對某像素掃描并讀(du)出其信(xin)號(hao)電(dian)荷(he)之后，下一次(ci)掃描后讀(du)出信(xin)號(hao)仍受上次(ci)遺留信(xin)號(hao)電(dian)荷(he)影響的(de)(de)現象叫殘像。等(deng)(deng)效噪聲曝光(guang)量(liang):產生與暗輸出(電(dian)壓)等(deng)(deng)值(zhi)時(shi)的(de)(de)曝光(guang)量(liang)稱為傳感器的(de)(de)等(deng)(deng)效噪聲曝光(guang)量(liang)。CMOS針對CCD的(de)(de)優勢就是非常(chang)省電(dian)，建德市CCD傳感器，不像由二極管組成的(de)(de)CCD，CMOS 電(dian)路幾(ji)乎沒有靜態電(dian)量(liang)消(xiao)(xiao)耗(hao)，只(zhi)有在電(dian)路接(jie)通時(shi)才有電(dian)量(liang)的(de)(de)消(xiao)(xiao)耗(hao)。

由于(yu)CCD采(cai)用電荷傳(chuan)(chuan)(chuan)遞的(de)(de)(de)方式(shi)傳(chuan)(chuan)(chuan)送數據，只(zhi)要其中(zhong)有(you)一個(ge)象素不能(neng)運行，就會導(dao)致一整排的(de)(de)(de)數據不能(neng)傳(chuan)(chuan)(chuan)送，因此(ci)控制CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)成品率比(bi)(bi)CMOS傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器困難許多，即使有(you)經驗(yan)的(de)(de)(de)廠商(shang)也很難在(zai)產品問(wen)世的(de)(de)(de)半(ban)年內(nei)突破50%的(de)(de)(de)水平，因此(ci)，CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)成本會高于(yu)CMOS傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器。CMOS傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)每個(ge)象素都比(bi)(bi)CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器復雜，CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器多少錢，其象素尺寸很難達到CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)水平，CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器廠，因此(ci)，當比(bi)(bi)較(jiao)相同尺寸的(de)(de)(de)CCD與CMOS傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器時，CCD傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)分辨率通常(chang)會優于(yu)CMOS傳(chuan)(chuan)(chuan)感(gan)(gan)(gan)(gan)(gan)(gan)器的(de)(de)(de)水平。

CCD是(shi)由許多個(ge)光(guang)(guang)敏(min)像元按一定規律排列組成(cheng)的(de)(de)。每個(ge)像元就(jiu)是(shi)一個(ge)MOS電(dian)(dian)(dian)(dian)(dian)容器(qi)(大多為(wei)光(guang)(guang)敏(min)二極(ji)(ji)管(guan))，它是(shi)在(zai)P 型(xing)Si襯底(di)表面上用氧化(hua)的(de)(de)辦(ban)法生(sheng)成(cheng)1層厚度(du)約為(wei)1000A～1500A的(de)(de)SiO2，CCD傳(chuan)感器(qi)哪(na)家好，再在(zai)SiO2表面蒸鍍一金屬層(多晶硅)，在(zai)襯底(di)和(he)金屬電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)間(jian)加(jia)上1個(ge)偏置電(dian)(dian)(dian)(dian)(dian)壓，就(jiu)構成(cheng)1個(ge)MOS電(dian)(dian)(dian)(dian)(dian)容器(qi)。當有(you)1束光(guang)(guang)線(xian)投射到MOS電(dian)(dian)(dian)(dian)(dian)容器(qi)上時(shi)，光(guang)(guang)子(zi)(zi)穿過(guo)透明電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)及氧化(hua)層，進(jin)入(ru)P型(xing)Si襯底(di)，襯底(di)中處于價帶的(de)(de)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)將吸收光(guang)(guang)子(zi)(zi)的(de)(de)能(neng)量而躍(yue)入(ru)導帶。光(guang)(guang)子(zi)(zi)進(jin)入(ru)襯底(di)時(shi)產(chan)生(sheng)的(de)(de)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)躍(yue)遷形成(cheng)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)－空(kong)穴對，電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)－空(kong)穴對在(zai)外加(jia)電(dian)(dian)(dian)(dian)(dian)場的(de)(de)作用下，分別(bie)向(xiang)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)的(de)(de)兩端移動，這(zhe)就(jiu)是(shi)信號(hao)電(dian)(dian)(dian)(dian)(dian)荷。這(zhe)些信號(hao)電(dian)(dian)(dian)(dian)(dian)荷儲存在(zai)由電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)形成(cheng)的(de)(de)“勢阱”中。