單(dan)體(ti)太(tai)(tai)陽(yang)電(dian)池(chi)(chi)不能直接做(zuo)電(dian)源(yuan)使(shi)用。作電(dian)源(yuan)必須將若干單(dan)體(ti)電(dian)池(chi)(chi)串(chuan)、并(bing)聯連接和嚴(yan)密封裝成組件。太(tai)(tai)陽(yang)能電(dian)池(chi)(chi)組件（也叫太(tai)(tai)陽(yang)能電(dian)池(chi)(chi)板）是太(tai)(tai)陽(yang)能發(fa)電(dian)系(xi)統中(zhong)的部分，也是太(tai)(tai)陽(yang)能發(fa)電(dian)系(xi)統中(zhong)重要(yao)(yao)(yao)的部分。嚴(yan)格控制層壓機(ji)溫度、 時(shi)間等(deng)重要(yao)(yao)(yao)參數 并(bing)定期按照(zhao)要(yao)(yao)(yao)求(qiu)做(zuo)交(jiao)聯度實(shi)驗，并(bing)將交(jiao)聯度控 制在85%±5%內。多晶(jing)硅(gui)太(tai)(tai)陽(yang)電(dian)池(chi)(chi)的制作工藝(yi)與單(dan)晶(jing)硅(gui)太(tai)(tai)陽(yang)電(dian)池(chi)(chi)差(cha)不多，但是多晶(jing)硅(gui)太(tai)(tai)陽(yang)能電(dian)池(chi)(chi)的光(guang)電(dian)轉換效率則(ze)要(yao)(yao)(yao)降低不少(shao)，其光(guang)電(dian)轉換效率約12%左右。

源于半導體技(ji)術的(de)(de)晶體硅(gui)光(guang)(guang)伏誕生(sheng)時(shi)只有轉換率高(gao)的(de)(de)單晶硅(gui)，由于成本(ben)高(gao)，10年前開(kai)始(shi)多(duo)晶路線逐漸占據主導。近年來，光(guang)(guang)伏組(zu)件生(sheng)產(chan)，隨著分布式光(guang)(guang)伏的(de)(de)發展(zhan)和對效率的(de)(de)要求，單晶硅(gui)全產(chan)業鏈更多(duo)參與(yu)者(zhe)的(de)(de)推動，單晶和多(duo)晶產(chan)品的(de)(de)差距在縮小(xiao)。光(guang)(guang)伏組(zu)件框架結(jie)構應該是(shi)沒有突(tu)出部位(wei)的(de)(de)，以(yi)避免水、灰塵或者(zhe)其他物體的(de)(de)積存。其表面氧化層厚度大于10μm，可(ke)以(yi)保證在室(shi)外環境(jing)使用30年以(yi)上不(bu)被腐蝕，牢固耐用。

太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)件的(de)作用(yong)是將太陽(yang)能(neng)(neng)轉化為電(dian)(dian)(dian)(dian)(dian)能(neng)(neng)，或送(song)往蓄(xu)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)中(zhong)存儲起來，滁州(zhou)光(guang)伏組(zu)件，或推(tui)動負(fu)載工(gong)作。對正負(fu)電(dian)(dian)(dian)(dian)(dian)荷，光(guang)伏組(zu)件生(sheng)(sheng)產廠家，由于在(zai)PN結區(qu)域的(de)正負(fu)電(dian)(dian)(dian)(dian)(dian)荷被分離，因(yin)而可(ke)以產生(sheng)(sheng)一個(ge)外電(dian)(dian)(dian)(dian)(dian)流場，光(guang)伏組(zu)件價(jia)格，電(dian)(dian)(dian)(dian)(dian)流從晶體硅(gui)(gui)片電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)底端(duan)經過負(fu)載流至電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)頂端(duan)。 這就是 “光(guang)生(sheng)(sheng)伏打效應”。多晶硅(gui)(gui)太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)使用(yong)壽命(ming)也要比(bi)單(dan)晶硅(gui)(gui)太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)短。從性能(neng)(neng)價(jia)格比(bi)來講，單(dan)晶硅(gui)(gui)太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)還(huan)略好。太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)板(ban)(ban)的(de)輸出功率應為555Wh/6h/70%=130W。其中(zhong)70%是充電(dian)(dian)(dian)(dian)(dian)過程中(zhong)，太陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)板(ban)(ban)的(de)實際使用(yong)功率。