硅太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)制(zhi)造過程中消耗的(de)(de)(de)(de)能(neng)(neng)量要比單(dan)晶(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)少30％左(zuo)右，因此多(duo)(duo)晶(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)占(zhan)太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)總產量的(de)(de)(de)(de)份額(e)大，制(zhi)造成(cheng)本(ben)也小于(yu)單(dan)晶(jing)(jing)硅電(dian)(dian)(dian)(dian)池(chi)(chi)，光(guang)伏組件廠，所(suo)以使(shi)用多(duo)(duo)晶(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)將(jiang)會(hui)更加的(de)(de)(de)(de)節(jie)能(neng)(neng)、環(huan)保(bao)。其(qi)實可供制(zhi)造太(tai)陽(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)半導(dao)體材(cai)(cai)料很(hen)多(duo)(duo)，隨著材(cai)(cai)料工業的(de)(de)(de)(de)發(fa)展、太(tai)陽(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)品種將(jiang)越來(lai)越多(duo)(duo)。目前已進行研究和試制(zhi)的(de)(de)(de)(de)太(tai)陽(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)，除硅系列外，還有(you)、、銅銦硒等許多(duo)(duo)類型的(de)(de)(de)(de)太(tai)陽(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)，舉(ju)不勝舉(ju)，通常這些材(cai)(cai)料都會(hui)用來(lai)制(zhi)作非(fei)晶(jing)(jing)硅電(dian)(dian)(dian)(dian)池(chi)(chi)。

光(guang)(guang)伏發電(dian)中半片(pian)光(guang)(guang)伏組件的優勢提高封(feng)裝效率，封(feng)裝損(sun)失(shi)常規(gui)組件一(yi)般大(da)于1%，而(er)半片(pian)組件一(yi)般在0。2%左右。因此半片(pian)組件利(li)用了低電(dian)流特點(dian)，有效提高組件的封(feng)裝效率。發展趨勢，光(guang)(guang)伏多晶組件，隨著電(dian)站投(tou)資商平(ping)價(jia)上網的壓力越來(lai)越大(da)，對度電(dian)成本的訴求越來(lai)越高。半片(pian)組件與常規(gui)組件相比，在制造環節主要增(zeng)加的成本包括電(dian)池的切片(pian)、輔料和人工(gong)費用、設備折舊費等。

光(guang)(guang)伏組(zu)件單(dan)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)的(de)光(guang)(guang)電(dian)(dian)轉換(huan)效(xiao)率(lv)(lv)的(de)達到24%，這是所有種類(lei)的(de)太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)中光(guang)(guang)電(dian)(dian)轉換(huan)效(xiao)率(lv)(lv)的(de)。但(dan)是單(dan)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)的(de)制(zhi)(zhi)作成(cheng)本很大，光(guang)(guang)伏組(zu)件回收，以至于它還不能(neng)(neng)(neng)(neng)(neng)被大量廣泛和普遍地使(shi)用。多(duo)(duo)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)從制(zhi)(zhi)作成(cheng)本上來講，比單(dan)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)要便宜一些，棗(zao)莊光(guang)(guang)伏組(zu)件，但(dan)是多(duo)(duo)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)的(de)光(guang)(guang)電(dian)(dian)轉換(huan)效(xiao)率(lv)(lv)則要降低不少，此外，多(duo)(duo)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)的(de)使(shi)用壽命(ming)也要比單(dan)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)短。因此，從性能(neng)(neng)(neng)(neng)(neng)價(jia)格比來講，單(dan)晶(jing)(jing)(jing)硅太(tai)陽(yang)能(neng)(neng)(neng)(neng)(neng)電(dian)(dian)池(chi)還略好。