鋁合金微(wei)(wei)弧(hu)氧(yang)化(hua)又稱等離子體微(wei)(wei)弧(hu)氧(yang)化(hua)，等離子體陶瓷(ci)化(hua)或火花放電(dian)(dian)沉(chen)積技術(shu)。它是在普通(tong)陽極氧(yang)化(hua)基礎上通(tong)過提(ti)升電(dian)(dian)壓(ya)等措施發展(zhan)起來的(de)(de)，微(wei)(wei)弧(hu)氧(yang)化(hua)電(dian)(dian)源參數，是通(tong)過電(dian)(dian)解液與相應電(dian)(dian)參數的(de)(de)組合，在鋁、鎂、鈦(tai)及其(qi)合金表面依靠弧(hu)光放電(dian)(dian)產生的(de)(de)瞬時高(gao)溫高(gao)壓(ya)作用，實驗室(shi)微(wei)(wei)弧(hu)氧(yang)化(hua)電(dian)(dian)源，生長(chang)出以基體金屬氧(yang)化(hua)物為(wei)主(zhu)的(de)(de)陶瓷(ci)膜層。為(wei)此(ci)微(wei)(wei)弧(hu)氧(yang)化(hua)膜的(de)(de)硬度和耐磨性(xing)都得到明顯提(ti)高(gao)，其(qi)耐腐蝕性(xing)和電(dian)(dian)絕緣性(xing)也隨(sui)之(zhi)有較大(da)的(de)(de)提(ti)高(gao)。

      由于(yu)微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)是在陽極氧(yang)化(hua)(hua)(hua)膜被電(dian)(dian)(dian)ji穿(chuan)(chuan)的(de)(de)(de)基(ji)礎(chu)上(shang)進行的(de)(de)(de)，所以在探討微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)機理(li)(li)時我們要結合電(dian)(dian)(dian)ji穿(chuan)(chuan)理(li)(li)論的(de)(de)(de)研究(jiu)和(he)發(fa)展，從而闡述微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)基(ji)本原(yuan)理(li)(li)。微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)技術(shu)就是在電(dian)(dian)(dian)ji穿(chuan)(chuan)理(li)(li)論的(de)(de)(de)基(ji)礎(chu)上(shang)加以研究(jiu)和(he)應用(yong)的(de)(de)(de)新型表面力(li)一(yi)技術(shu)。自1932年Betz等觀察(cha)到電(dian)(dian)(dian)ji穿(chuan)(chuan)的(de)(de)(de)現象以來，許多研究(jiu)者都對電(dian)(dian)(dian)ji穿(chuan)(chuan)產生(sheng)的(de)(de)(de)原(yuan)因 過各種各樣的(de)(de)(de)假設和(he)模(mo)型。總(zong)體上(shang)看，電(dian)(dian)(dian)ji穿(chuan)(chuan)理(li)(li)論經(jing)歷了離子(zi)電(dian)(dian)(dian)流機理(li)(li)、熱作用(yong)機理(li)(li)、機械(xie)作用(yong)機理(li)(li)以及電(dian)(dian)(dian)子(zi)雪崩機理(li)(li)等不(bu)同的(de)(de)(de)發(fa)展階段(duan)。了解電(dian)(dian)(dian)ji穿(chuan)(chuan)原(yuan)理(li)(li)，對于(yu)研究(jiu)微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)機理(li)(li)，實驗(yan)微(wei)(wei)弧(hu)氧(yang)化(hua)(hua)(hua)電(dian)(dian)(dian)源，開發(fa)新的(de)(de)(de)表面處(chu)理(li)(li)技術(shu)均有(you)著重要的(de)(de)(de)理(li)(li)論意義。

液體成分對微弧氧化的影響(xiang)

      電(dian)解液成(cheng)分是得到合格膜(mo)(mo)層的關鍵因(yin)素。微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)液一般選用(yong)含有一定金屬或非金屬氧(yang)化(hua)物堿性(xing)鹽溶液，如(ru)硅酸(suan)鹽、磷酸(suan)鹽、硼酸(suan)鹽等。在相同的微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)電(dian)解電(dian)壓下，電(dian)解質濃度越(yue)大，成(cheng)膜(mo)(mo)速度就(jiu)越(yue)快，微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)電(dian)源，溶液溫(wen)度上升(sheng)越(yue)慢，反(fan)之，成(cheng)膜(mo)(mo)速度較慢，溶液溫(wen)度上升(sheng)較快。微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)、微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)技術、微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)電(dian)源、微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)電(dian)源生產線、微(wei)(wei)(wei)(wei)(wei)弧(hu)(hu)氧(yang)化(hua)電(dian)液槽