公(gong)司(si)成立于2013年(nian)7月(yue)，專注從事單片機的應(ying)用開(kai)發(fa)及(ji)生產(chan)(chan)，并提供全系列中低壓MOS及(ji)電(dian)源、鋰電(dian)IC等(deng)的銷(xiao)售，在LED及(ji)小家(jia)電(dian)等(deng)消費類(lei)電(dian)子產(chan)(chan)品上(shang)應(ying)用廣(guang)泛(fan)，大(da)電(dian)流mos公(gong)司(si)，為您(nin)量(liang)身定制適合的芯(xin)片方案。

有些(xie)場(chang)效(xiao)應(ying)(ying)管(guan)(guan)的(de)源極(ji)和漏極(ji)可以互換(huan)使用，柵壓也可正可負，靈活性比晶體管(guan)(guan)好。場(chang)效(xiao)應(ying)(ying)管(guan)(guan)能在(zai)很(hen)小電(dian)(dian)(dian)流和很(hen)低電(dian)(dian)(dian)壓的(de)條件(jian)下(xia)工(gong)作，而且它的(de)制造(zao)工(gong)藝(yi)可以很(hen)方便(bian)地把很(hen)多場(chang)效(xiao)應(ying)(ying)管(guan)(guan)集(ji)成在(zai)一塊硅片上(shang)，因(yin)此場(chang)效(xiao)應(ying)(ying)管(guan)(guan)在(zai)大(da)規模集(ji)成電(dian)(dian)(dian)路中得到(dao)了廣(guang)泛的(de)應(ying)(ying)用。

在一(yi)般電(dian)(dian)子電(dian)(dian)路(lu)(lu)中，通常(chang)被用(yong)于放大電(dian)(dian)路(lu)(lu)或(huo)開關電(dian)(dian)路(lu)(lu)。而在主(zhu)板上(shang)(shang)的電(dian)(dian)源穩壓電(dian)(dian)路(lu)(lu)中，MOSFET扮演的角(jiao)色(se)主(zhu)要(yao)是判斷電(dian)(dian)位，它在主(zhu)板上(shang)(shang)常(chang)用(yong)“Q”加數字表(biao)示。

公司成立于2013年7月，專注(zhu)從事單片(pian)機的應用(yong)開(kai)發及生(sheng)產，并提供全系列(lie)中(zhong)低壓(ya)MOS及電(dian)(dian)(dian)源(yuan)、鋰(li)電(dian)(dian)(dian)IC等的銷售，在LED及小家(jia)電(dian)(dian)(dian)等消費類(lei)電(dian)(dian)(dian)子產品上(shang)應用(yong)廣泛，為您量(liang)身定(ding)制適(shi)合(he)的芯(xin)片(pian)方案(an)。

MOS管是利用VGS去(qu)控(kong)制“感應電(dian)(dian)(dian)荷”的(de)(de)(de)多少，由此(ci)去(qu)改(gai)變(bian)由這些“感應電(dian)(dian)(dian)荷”所形(xing)成(cheng)(cheng)的(de)(de)(de)導電(dian)(dian)(dian)溝(gou)道(dao)的(de)(de)(de)狀況，以此(ci)來(lai)控(kong)制漏(lou)極(ji)電(dian)(dian)(dian)流(liu)。在(zai)管子制造時(shi)，通過(guo)一些特殊工藝使(shi)得絕緣(yuan)層出現大(da)(da)量的(de)(de)(de)正離子，大(da)(da)電(dian)(dian)(dian)流(liu)mos價格(ge)，所以在(zai)交(jiao)界面另一側(ce)可以感測(ce)出比較多的(de)(de)(de)負(fu)電(dian)(dian)(dian)荷，高滲(shen)雜質的(de)(de)(de)N區被(bei)這些負(fu)電(dian)(dian)(dian)荷接通，導電(dian)(dian)(dian)溝(gou)道(dao)也(ye)就形(xing)成(cheng)(cheng)了(le)，即便在(zai)VGS為(wei)0時(shi)也(ye)會(hui)(hui)有比較大(da)(da)的(de)(de)(de)漏(lou)極(ji)電(dian)(dian)(dian)流(liu)ID。如果柵(zha)極(ji)電(dian)(dian)(dian)壓發(fa)生(sheng)(sheng)改(gai)變(bian)時(shi)，溝(gou)道(dao)里的(de)(de)(de)被(bei)感應電(dian)(dian)(dian)荷量也(ye)會(hui)(hui)發(fa)生(sheng)(sheng)改(gai)變(bian)，導電(dian)(dian)(dian)溝(gou)道(dao)中的(de)(de)(de)寬窄也(ye)會(hui)(hui)隨著改(gai)變(bian)，因此(ci)漏(lou)極(ji)電(dian)(dian)(dian)流(liu)ID會(hui)(hui)伴隨著柵(zha)極(ji)電(dian)(dian)(dian)壓的(de)(de)(de)變(bian)化(hua)而發(fa)生(sheng)(sheng)變(bian)化(hua)。

公司(si)成立于2013年7月(yue)，專注從(cong)事單片(pian)機(ji)的應用開發及生產(chan)，余姚(yao)大電(dian)流mos，并提供全(quan)系列中低壓MOS及電(dian)源、鋰(li)電(dian)IC等的銷售(shou)，在LED及小家電(dian)等消(xiao)費類電(dian)子產(chan)品上應用廣泛，為您量身(shen)定制適合(he)的芯(xin)片(pian)方案(an)。

電(dian)(dian)(dian)(dian)源(yuan)作為電(dian)(dian)(dian)(dian)子設(she)備(bei)的(de)(de)(de)(de)配電(dian)(dian)(dian)(dian)元器件，除開特性要(yao)考慮(lv)供電(dian)(dian)(dian)(dian)系統設(she)備(bei)的(de)(de)(de)(de)規定以外，其(qi)自己的(de)(de)(de)(de)防護(hu)措施也很重要(yao)，WP大電(dian)(dian)(dian)(dian)流(liu)(liu)mos，如過電(dian)(dian)(dian)(dian)流(liu)(liu)、過電(dian)(dian)(dian)(dian)壓、超溫維護(hu)等(deng)。一旦電(dian)(dian)(dian)(dian)源(yuan)沒有(you)過流(liu)(liu)保護(hu)設(she)計方(fang)案，在(zai)輸(shu)出短路故(gu)(gu)障或過載的(de)(de)(de)(de)時候會造(zao)成(cheng)電(dian)(dian)(dian)(dian)源(yuan)損壞(huai)，也有(you)很有(you)可(ke)能(neng)進一步造(zao)成(cheng)電(dian)(dian)(dian)(dian)子設(she)備(bei)毀(hui)壞(huai)，乃至(zhi)造(zao)成(cheng)實(shi)際操作工作人(ren)員(yuan)的(de)(de)(de)(de)觸電(dian)(dian)(dian)(dian)事故(gu)(gu)及(ji)火(huo)情等(deng)安全事故(gu)(gu)，而電(dian)(dian)(dian)(dian)源(yuan)的(de)(de)(de)(de)過流(liu)(liu)保護(hu)跟使用的(de)(de)(de)(de)MOS管相關。