光伏組件的背面串接

背面(mian)焊(han)接(jie)(jie)(jie)是(shi)(shi)將(jiang)電(dian)(dian)(dian)池(chi)串接(jie)(jie)(jie)在(zai)一(yi)起形成一(yi)個組(zu)件(jian)串，我們目前(qian)采用(yong)(yong)的(de)(de)(de)工藝(yi)是(shi)(shi)手動的(de)(de)(de)，電(dian)(dian)(dian)池(chi)的(de)(de)(de)定(ding)位(wei)主要(yao)靠一(yi)個膜具(ju)板，上(shang)面(mian)有放置電(dian)(dian)(dian)池(chi)片的(de)(de)(de)凹(ao)槽，光伏(fu)組(zu)件(jian)廠(chang)家(jia)排名，槽的(de)(de)(de)大小(xiao)和電(dian)(dian)(dian)池(chi)的(de)(de)(de)大小(xiao)相對(dui)應，槽的(de)(de)(de)位(wei)置已經設(she)計好，不(bu)同規格的(de)(de)(de)組(zu)件(jian)使(shi)用(yong)(yong)不(bu)同的(de)(de)(de)模板，操作者使(shi)用(yong)(yong)電(dian)(dian)(dian)烙鐵和焊(han)錫絲將(jiang)'前(qian)面(mian)電(dian)(dian)(dian)池(chi)'的(de)(de)(de)正(zheng)面(mian)電(dian)(dian)(dian)極(ji)(負(fu)極(ji))焊(han)接(jie)(jie)(jie)到'后面(mian)電(dian)(dian)(dian)池(chi)'的(de)(de)(de)背面(mian)電(dian)(dian)(dian)極(ji)(正(zheng)極(ji))上(shang)，這樣依次串接(jie)(jie)(jie)在(zai)一(yi)起并(bing)在(zai)組(zu)件(jian)串的(de)(de)(de)正(zheng)負(fu)極(ji)焊(han)接(jie)(jie)(jie)出引線(xian)。

光伏(fu)組件(俗稱太(tai)陽(yang)(yang)能電(dian)(dian)(dian)(dian)池板)由(you)太(tai)陽(yang)(yang)能電(dian)(dian)(dian)(dian)池片(整(zheng)片的(de)(de)兩種(zhong)規格125*125mm、156*156mm、124*124mm等)或(huo)(huo)(huo)由(you)激光切割(ge)(ge)機機或(huo)(huo)(huo)鋼線切割(ge)(ge)機切割(ge)(ge)開的(de)(de)不(bu)(bu)同(tong)規格的(de)(de)太(tai)陽(yang)(yang)能電(dian)(dian)(dian)(dian)池組合在一起構(gou)成(cheng)。由(you)于單(dan)片太(tai)陽(yang)(yang)能電(dian)(dian)(dian)(dian)池片的(de)(de)電(dian)(dian)(dian)(dian)流和電(dian)(dian)(dian)(dian)壓都(dou)很小，然后我們把他們先串聯獲得高電(dian)(dian)(dian)(dian)壓，再(zai)并(bing)聯獲得高電(dian)(dian)(dian)(dian)流后，通過一個二極(ji)管(防止(zhi)電(dian)(dian)(dian)(dian)流回輸(shu)(shu))然后輸(shu)(shu)出。并(bing)且(qie)把他們封裝在一個不(bu)(bu)銹(xiu)鋼、鋁或(huo)(huo)(huo)其他非金屬邊框上，安(an)裝好(hao)上面(mian)的(de)(de)玻(bo)璃及背(bei)面(mian)的(de)(de)背(bei)板、充入(ru)氮氣、密封。整(zheng)體(ti)稱為組件，也就是光伏(fu)組件或(huo)(huo)(huo)說(shuo)是太(tai)陽(yang)(yang)電(dian)(dian)(dian)(dian)池組件。

為簡化計算在此可通(tong)過(guo)電(dian)(dian)池(chi)表面太陽光(guang)輻(fu)照閾值(zhi)(zhi)(光(guang)伏電(dian)(dian)池(chi)組(zu)件(jian)啟動發電(dian)(dian)時其表面所應(ying)接受到的(de)輻(fu)射(she)(she)量限值(zhi)(zhi)，單晶硅和(he)多晶硅電(dian)(dian)池(chi)啟動發電(dian)(dian)的(de)表面總(zong)輻(fu)射(she)(she)量≥80W/m、薄膜電(dian)(dian)池(chi)表面總(zong)輻(fu)射(she)(she)量≥30W/m)進行判斷;b)光(guang)伏陣(zhen)(zhen)列的(de)功率(lv)不(bu)能(neng)超(chao)過(guo)逆(ni)變器(qi)的(de)額定容(rong)量。根(gen)據設(she)計的(de)電(dian)(dian)池(chi)組(zu)件(jian)分(fen)組(zu)陣(zhen)(zhen)列的(de)輸出(chu)電(dian)(dian)壓和(he)總(zong)功率(lv)選配相應(ying)工(gong)作電(dian)(dian)壓和(he)功率(lv)的(de)逆(ni)變器(qi)，或(huo)根(gen)據逆(ni)變器(qi)的(de)參(can)數調(diao)整(zheng)設(she)計電(dian)(dian)池(chi)組(zu)件(jian)分(fen)組(zu)陣(zhen)(zhen)列串并聯的(de)方(fang)式以(yi)滿(man)足(zu)相應(ying)的(de)輸出(chu)電(dian)(dian)壓和(he)總(zong)功率(lv)。