電(dian)池充(chong)(chong)(chong)(chong)放(fang)(fang)電(dian)測(ce)試(shi)方法詳解倍(bei)率(lv)(lv)(lv)性(xing)能(neng)測(ce)試(shi)有(you)3種形(xing)式，包括采用(yong)(yong)相(xiang)同倍(bei)率(lv)(lv)(lv)恒流(liu)(liu)(liu)恒壓充(chong)(chong)(chong)(chong)電(dian)，并(bing)以不同倍(bei)率(lv)(lv)(lv)恒流(liu)(liu)(liu)放(fang)(fang)電(dian)測(ce)試(shi)，表征和評(ping)估鋰離子電(dian)池在(zai)不同放(fang)(fang)電(dian)倍(bei)率(lv)(lv)(lv)時的(de)性(xing)能(neng);或者采用(yong)(yong)相(xiang)同的(de)倍(bei)率(lv)(lv)(lv)進行恒流(liu)(liu)(liu)放(fang)(fang)電(dian)，并(bing)以不同倍(bei)率(lv)(lv)(lv)恒流(liu)(liu)(liu)充(chong)(chong)(chong)(chong)電(dian)測(ce)試(shi)，表征電(dian)池在(zai)不同倍(bei)率(lv)(lv)(lv)下的(de)充(chong)(chong)(chong)(chong)電(dian)性(xing)能(neng);以及充(chong)(chong)(chong)(chong)放(fang)(fang)電(dian)采用(yong)(yong)相(xiang)同倍(bei)率(lv)(lv)(lv)進行充(chong)(chong)(chong)(chong)放(fang)(fang)電(dian)測(ce)試(shi)。常(chang)采用(yong)(yong)的(de)充(chong)(chong)(chong)(chong)放(fang)(fang)電(dian)倍(bei)率(lv)(lv)(lv)有(you)0。02C，0。05C，0。1C，C/3，0。5C，1C，2C，3C，5C和10C等。

蓄電(dian)(dian)(dian)(dian)池(chi)(chi)放(fang)(fang)電(dian)(dian)(dian)(dian)測(ce)試(shi)儀可(ke)(ke)記錄測(ce)試(shi)/放(fang)(fang)電(dian)(dian)(dian)(dian)過(guo)程，主要是電(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)總容量、總電(dian)(dian)(dian)(dian)壓(ya)、總電(dian)(dian)(dian)(dian)流以(yi)及(ji)電(dian)(dian)(dian)(dian)壓(ya)低(di)的單體電(dian)(dian)(dian)(dian)池(chi)(chi)的電(dian)(dian)(dian)(dian)壓(ya)變化(hua)情況。電(dian)(dian)(dian)(dian)池(chi)(chi)放(fang)(fang)電(dian)(dian)(dian)(dian)測(ce)試(shi)儀采用無線通訊技術，通過(guo)PC機監控的軟件可(ke)(ke)對蓄電(dian)(dian)(dian)(dian)池(chi)(chi)放(fang)(fang)電(dian)(dian)(dian)(dian)過(guo)程進行實(shi)(shi)時(shi)監測(ce)，監控每節電(dian)(dian)(dian)(dian)池(chi)(chi)的放(fang)(fang)電(dian)(dian)(dian)(dian)過(guo)程。實(shi)(shi)時(shi)在線監測(ce)單模(mo)塊內阻，電(dian)(dian)(dian)(dian)壓(ya)及(ji)溫度(du)。可(ke)(ke)分析單體電(dian)(dian)(dian)(dian)池(chi)(chi)的交流內阻和電(dian)(dian)(dian)(dian)池(chi)(chi)包(bao)的直(zhi)流內阻。測(ce)量溫度(du)取決于(yu)用戶所(suo)選擇的熱電(dian)(dian)(dian)(dian)偶型號。

電(dian)(dian)池(chi)(chi)(chi)充(chong)放(fang)(fang)電(dian)(dian)測試(shi)(shi)系(xi)統(tong)產(chan)品功能與(yu)優勢斷電(dian)(dian)記憶保(bao)護功能電(dian)(dian)池(chi)(chi)(chi)充(chong)放(fang)(fang)電(dian)(dian)測試(shi)(shi)系(xi)統(tong)，蓄電(dian)(dian)池(chi)(chi)(chi)充(chong)放(fang)(fang)電(dian)(dian)試(shi)(shi)驗，相比較(jiao)傳統(tong)充(chong)放(fang)(fang)電(dian)(dian)一(yi)體機的(de)(de)單一(yi)保(bao)護設定，其亮點在于(yu)提供斷電(dian)(dian)記憶功能。斷電(dian)(dian)記憶功能專(zhuan)門(men)應對于(yu)長時(shi)間(jian)的(de)(de)老化測試(shi)(shi)而(er)設計研發，可以有效保(bao)證長時(shi)間(jian)老化測試(shi)(shi)的(de)(de)數據在異(yi)常斷電(dian)(dian)或電(dian)(dian)腦死機等條件下(xia)，之(zhi)前采集的(de)(de)數據仍然能夠完好的(de)(de)保(bao)存，并且(qie)待系(xi)統(tong)恢復(fu)正常運(yun)行后(hou)，程序接著出錯的(de)(de)地(di)方繼續往(wang)下(xia)執行，避免重復(fu)測試(shi)(shi)的(de)(de)麻煩，提高了測試(shi)(shi)的(de)(de)效率(lv)。