光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)組件是如何影(ying)響屋頂光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發(fa)電(dian)(dian)量的一(yi)、組件灰塵(chen)影(ying)響對(dui)于(yu)長(chang)時間運(yun)行的光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發(fa)電(dian)(dian)系統(tong)，面板積塵(chen)對(dui)其影(ying)響不(bu)可小覷(qu)。面板表(biao)面的灰塵(chen)具有反射(she)、散(san)射(she)和(he)吸收(shou)太(tai)(tai)陽(yang)輻(fu)射(she)的作(zuo)(zuo)(zuo)用(yong)(yong)，可降低太(tai)(tai)陽(yang)的透過率，造成(cheng)(cheng)面板接收(shou)到的太(tai)(tai)陽(yang)輻(fu)射(she)減少，輸出功率也隨(sui)之減小，太(tai)(tai)陽(yang)能光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)組件廠，其作(zuo)(zuo)(zuo)用(yong)(yong)與灰塵(chen)累積厚度成(cheng)(cheng)正比(bi)。1。遮擋(dang)影(ying)響灰塵(chen)附著在電(dian)(dian)池板表(biao)面，會對(dui)光(guang)(guang)(guang)(guang)線產生遮擋(dang)，吸收(shou)和(he)反射(she)等(deng)作(zuo)(zuo)(zuo)用(yong)(yong)。

光(guang)伏(fu)電(dian)池(chi)(chi)組件的方(fang)(fang)(fang)(fang)(fang)位(wei)(wei)角(jiao)(jiao)(jiao)太陽(yang)電(dian)池(chi)(chi)方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)的方(fang)(fang)(fang)(fang)(fang)位(wei)(wei)角(jiao)(jiao)(jiao)是(shi)方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)的垂直(zhi)面(mian)(mian)與正(zheng)南(nan)方(fang)(fang)(fang)(fang)(fang)向(xiang)的夾角(jiao)(jiao)(jiao)（向(xiang)東偏(pian)(pian)(pian)設定為負角(jiao)(jiao)(jiao)度(du)(du)，向(xiang)西(xi)偏(pian)(pian)(pian)設定為正(zheng)角(jiao)(jiao)(jiao)度(du)(du)）。一(yi)般情況(kuang)下，方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)朝向(xiang)正(zheng)南(nan)（即方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)垂直(zhi)面(mian)(mian)與正(zheng)南(nan)的夾角(jiao)(jiao)(jiao)為0°）時(shi)，太陽(yang)電(dian)池(chi)(chi)發電(dian)量是(shi)。在偏(pian)(pian)(pian)離(li)正(zheng)南(nan)（北半球(qiu)）30°度(du)(du)時(shi)，柔性太陽(yang)能(neng)光(guang)伏(fu)組件，方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)的發電(dian)量將(jiang)減少(shao)約10%～15%;在偏(pian)(pian)(pian)離(li)正(zheng)南(nan)（北半球(qiu)）60°時(shi)，方(fang)(fang)(fang)(fang)(fang)陣(zhen)(zhen)的發電(dian)量將(jiang)減少(shao)約20%～30%。

硅(gui)太(tai)(tai)(tai)陽(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)制(zhi)(zhi)造(zao)過程(cheng)中(zhong)消耗的(de)(de)能(neng)量要比單晶(jing)(jing)硅(gui)太(tai)(tai)(tai)陽(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)少30％左右，因此(ci)多晶(jing)(jing)硅(gui)太(tai)(tai)(tai)陽(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)占(zhan)太(tai)(tai)(tai)陽(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)總產量的(de)(de)份額大，上(shang)海(hai)太(tai)(tai)(tai)陽(yang)(yang)能(neng)，制(zhi)(zhi)造(zao)成本也小于單晶(jing)(jing)硅(gui)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)，所以使用多晶(jing)(jing)硅(gui)太(tai)(tai)(tai)陽(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)將會(hui)更加的(de)(de)節能(neng)、環(huan)保(bao)。其實(shi)可供制(zhi)(zhi)造(zao)太(tai)(tai)(tai)陽(yang)(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)半導體材(cai)料很多，隨著(zhu)材(cai)料工(gong)業的(de)(de)發展(zhan)、太(tai)(tai)(tai)陽(yang)(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)品種將越來越多。目前(qian)已進行(xing)研(yan)究和試制(zhi)(zhi)的(de)(de)太(tai)(tai)(tai)陽(yang)(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)，太(tai)(tai)(tai)陽(yang)(yang)能(neng)光伏發電(dian)(dian)(dian)(dian)組件價格，除(chu)硅(gui)系列外，還有、、銅(tong)銦硒等許多類型的(de)(de)太(tai)(tai)(tai)陽(yang)(yang)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)，舉不勝(sheng)舉，通常這些材(cai)料都會(hui)用來制(zhi)(zhi)作(zuo)非晶(jing)(jing)硅(gui)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)。